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In this paper, we present a unified compact model (Xsim) that is based on drift-diffusion/surface-potential (DD/SP) formalism for Si-bulk/SOI MOSFETs by incorporating a unified 2-dimensional electron gas (2DEG) model for extension to generic III–V MIS-HEMTs. The model has been validated with TCAD and experimental data for GaN-based HEMTs with nanometer gate lengths. Digital (inverter/ring-oscillator)...
This paper presents ideas for the development of multi-level compact model (CM) approach to variability and reliability for future generation MOS devices/circuits. Important device/circuit/gate figures-of-merit (FOMs) are formulated in multiple abstraction domains with dual-representation as statistical and probabilistic CMs, and reliability CMs are built into the core CM and propagated to circuit/gate...
A non-charge-sheet surface-potential-based compact drain-current model for long-channel undoped gate-all-around (GAA) silicon-nanowire (SiNW) MOSFETs is developed. The surface-potential equation is derived from cylindrical Poisson equation for undoped silicon and solved iteratively with a very good initial guess to reach equation residue below 10-16 V within a few iterations. The single-piece current...
A compact I ds model with physical drain-conductance (g ds ) modeling for deep-submicron MOSFETs is formulated based on first-principle momentum-/energy-balance equations, which simultaneously includes the hot-electron and thermoelectric effects in a unified compact form with two fitting parameters and one-step extraction. The model has been verified with 0.18-μm experimental data...
A physically-based effective mobility model is presented, which includes Coulombic, phonon, and surface roughness scattering mechanisms. The model is semi-empirical and consists of three physics-based fitting parameters to be extracted with a single measurement of terminal current. The developed model is shown to be more physical than the commonly-used empirical model, and the doping dependence can...
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