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This paper reviews the recent progress in photonic devices application of Ge-on-Si. Ge-on-Si materials and optical devices are suitable candidates for Si-based optoelectronic integration because of the mature epitaxial technique and the compatibility with Si complementary metal-oxide-semiconductor (CMOS) technology. Recently, the realities of electric-pump Ge light emitting diode (LED) and optical-pump...
Three types of Si-based photodetectors (PD) operating at long wavelength were introduced: the strained SiGe/Si multi-quantum-wells PD and Ge/Si islands PD with resonant cavity enhanced (RCE) structure, Ge p-i-n PD on silicon and SOI, Ge/Si avalanche photodetectors (APDs) with separate absorption, charge and multiplication (SACM) structure. The strained SiGe/Si MQW RCE PD and Ge/Si islands RCE PD has...
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