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In this paper, analytical and simulation based analysis to verify the inherent properties of SiGe HBT is done. The major performance parameters of SiGe HBT are cut-off freuency fT, maximum oscillation frequency fmax, base transit time τb, current gain β and electron mobility μn of SiGe base. These performance parameters are responsible for the reliability of SiGe HBT. Temperature is one of the major...
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