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Spin-polarized density functional theory is used to study two-hydrogen defect complexes in silicon carbide. We find that the magnetism depends on the distances of the two hydrogen atoms. Magnetism appears when the two hydrogen defects are distant from each other, and magnetism cancels out if they are close to each other. The critical distance between the two hydrogen defects is determined.
Helium defects in silicon carbide are studied using first principle calculations. The magnetization of various defects, such as vacancies, helium interstitials, and interstitial and vacancy complexes, are investigated. There is no magnetic element in silicon carbide. However, when a silicon atom is substituted by a helium atom, a ferromagnetic ground state is found. The total magnetic moment is found...
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