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Germanium and silicon monoxide thin films prepared with different evaporation conditions are analysed. Substrate temperatures from 30 to 370 °C and deposition rates from 0.3 to 3.0 nm/s for SiO and from 0.5 to 1.5 nm/s for Ge films are considered. Optical constants in the mid-infrared range are derived from transmission spectra and their variation with deposition conditions is related to structural...
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