The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The enhanced and partially polarized output of a green light-emitting diode, in which its InGaN/GaN quantum well couples with surface plasmons on an Ag grating structure, is demonstrated by comparing with the conventionally fabricated devices.
We demonstrate the loss of surface plasmon (SP) energy through oscillating electron leakage via the ohmic contact of either p-type or n-type GaN layer in the coupling process between SP and an InGaN/GaN quantum well (QW). The observation implies that in using the SP-QW coupling for enhancing emission in a light-emitting diode, the metals for ohmic contact and SP generation must be separated. A thin...
After several fundamental phenomena of surface plasmon coupling with an InGaN/GaN quantum well for light emission enhancement are studied, we evaluate the application of such a coupling process to a light-emitting diode with experimental supports.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.