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In this study, a novel planar inductor to detect the pressure sensor is proposed. The planar inductor consists of planar coil and CoFeB films. The proposed sensor exploits the inverse-magnetostriction effect to change the permeability of the CoFeB film by pressure load. This permeability variation will further result in the inductance difference of the planar inductor. Consequently the relationship...
This paper presents the first-principles study of an ultra-thin HfO2 on SiGe/Si substrate. The strong stress in hafnia layer caused by lattice mismatch significantly deforms the structure in this layer, and alters the valence-band offset between HfO2 and SiGe. These phenomena should significantly affect the properties of CMOS devices associated with an ultra-thin HfO2 dielectric film.
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