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This paper presents a 2-channel parallel laser diode driver processed by 0.35μm SiGe BiCMOS process. Each channel works at bite rate of 4Gbps. To increase bandwidth a "cross couple" capacitance cancel technology is introduced. An isolation method for parallel amplifier is used to avoid substrate coupling noise brought by the adjacent channel. The test results show the LDD can supply 20~80mA...
This paper presents a 12-channel parallel 40 Gb/s laser diode driver (LDD) realized in 0.35 mum SiGe BiCMOS technology. The single channel works at bite rate of 3.318 Gb/s. A "cross couple" capacitance cancel technique is used to increase bandwidth. To avoid substrate coupling noise brought by the adjacent channel, an isolation method for parallel amplifier is used. The measured results...
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