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Uniform and highly oriented NiSi0.8Ge0.2 layer is achieved by using a Ti interlayer during Ni germanosilicidation. Compared with the reference sample, the morphology of the grown Ni(Si0.8Ge0.2) layer with a Ti interlayer is improved with a better uniformity and smoother surface and interface. The Ni(Si0.8Ge0.2) layer is highly oriented grown on Si0.8Ge0.2 substrate at 500 °C annealing in the case...
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