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A finite element model which contains one sixth of the IGBT module based on a real test chip of IGBT module is established to investigate the temperature and stress distribution of different shape bonding wire. The finite element (FE) analysis which coupled electro-thermal and thermal-mechanical are conducted using commercial software ABAQUS. The thermal performance and stress distribution of IGBT...
Insulated gate bipolar transistor (IGBT) operates at high current, high power and repeated shock current conditions. Joule heating induced during high current conditions, subsequently raising the temperature of the IGBT module. In this paper, we carried out the DC power cycling test with the 200 A current condition. The temperature distribution and the temperature change process of the whole IGBT...
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