The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The 2-D limited regrowth of α-Si is proposed to achieve larger grain size and smoother surface simultaneously with conventional rapid thermal annealing process. Transmission line method is carried at room temperature and 100K temperature separately to confirm that the boundary scattering and ionization scattering are possibly suppressed by the capping layer method due to less grain boundary and trapped...
In this paper, the improved recrystallization of ultra-thin amorphous silicon (α-Si) film was realized by two-dimensionally confined lattice regrowth with normal rapid thermal annealing process. By experimental investigation, the α-Si films with thickness of 400 Å were found to be recrystallized even at 850°C for only 35s rapid thermal annealing (RTA). With capped Si3N4 layer, the lattice regrowth...
In this paper, the impact of structure and material of hard mask wet trimming (HMWT) process on the formation of Si Fins and their LER/LWR is investigated experimentally. Combining a capping layer with slow wet etching rate can effectively improve HMWT controllability and suppress LER/LWR of Si Fins. Based on the optimized HMWT, ultranarrow Si Fins with 5nm width and 40x aspect ratio is successfully...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.