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An attempt is made to observe light induced defects (LID) in amorphous chalcogenides Se90X10 (X=Sb, In, Ag) thin films prepared by vacuum evaporation technique. For the determination of light induced defects quantitatively, space charge limited current (SCLC) measurements have been made in a vacuum ∼10−3Torr before and after exposing amorphous films to white light for different exposure times (0 to...
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