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This paper shows how a buried aluminum eutectic drop at the cathode-side of a high-voltage power diode can affect the device behavior. The aluminum drop driven by thermo-migration, moves from the contact metallization some micrometers into the chip and forms a buried eutectic. Thermomigration [1] becomes stronger as the temperature gradient increases. High temperature gradients can be achieved at...
Chip technologies are developed, which introduce an IGBT with a trench cell and field stop technology for 1200 V up to 6500 V voltage applications. For wind power 1200 V and 1700V IGBT 4th generation optimized for low, medium and high power in combination with a new package concept PrimePACK™ will be described. For the 6.5 kV voltage class significant trade off improvements of the on state losses...
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