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CdTe/Mg0.46Cd0.54Te double heterostructures with n-type In doping concentrations, varied from 1 × 1016 to 7 × 1018 cm−3, have been grown on InSb substrates using molecular beam epitaxy. Secondary ion mass spectroscopy measurements show strong diffusion of In from the InSb substrate to the CdTe buffer layer, while the In concentration is constant in the CdTe layer between the two Mg 0.46Cd0.54Te barrier...
(Zn)CdTe/MgCdTe double heterostructures (DH) are grown on InSb substrates using MBE. The DHs are capped with 10∼30 nm (Zn)CdTe layers to prevent MgCdTe from oxidization. The carrier lifetimes of the DHs with Mg0.24Cd0.76Te barrier layer degrade fast within the first week in atmosphere and then at a much slower rate. The carrier lifetime degradation is about 20–30% compared with the initial value....
CdTe/MgCdTe double heterostructures with n-type indium doping concentrations, varied from 1×1016 cm−3 to 1×1018 cm−3, have been grown on InSb substrates using MBE. Capacitance voltage measurements show that carriers are 100% ionized for the doping concentrations in this range. The carrier lifetime decreases with increasing doping concentration, from 0.73 µs for an unintentionally doped sample to sub-nanosecond...
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