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The structural properties, crystalline quality and surface morphology of CdTe thin films without and with a ZnTe buffer layer grown on (001)GaAs by molecular beam epitaxy (MBE) have been studied. CdTe thin film directly prepared on GaAs substrate displays (111) orientation with an island growth mode, whereas the CdTe epilayers with a ZnTe buffer are (001)-oriented single-crystalline film with a two-dimensional...
ZnTe epilayers were grown on GaAs(001) substrates by molecular beam epitaxy (MBE) at different VI/II beam equivalent pressure (BEP) ratios (R VI/II ) in a wide range of 0.96–11 with constant Zn flux. Based on in situ reflection high-energy electron diffraction (RHEED) observation, two-dimensional (2D) growth mode can be formed by increasing the R VI/II to 2.8. The Te/Zn pressure ratios...
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