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Bitmap index is widely used in archiving and searching of Internet traffic, which is an essential step for analyzing network events in the field of network forensics. However, bitmap index requires a large storage space for fast searching in archival data. As current state-of-the-art bitmap index compression techniques, various encoding algorithms have been proposed, e.g. WAH, PLWAH, COMPAX, etc....
Based on the analysis on the factors affecting the performance of green supply chain, this paper establishes a normalized and operable evaluation system of green supply chain performance. Firstly, with fuzzy comprehensive evaluation, the green supply chain performance is evaluated as a whole and the gap is found. Then the evaluation results are analyzed by grey incidence analysis, which provides scientific...
Since emerged in 2004, Unified Threat Management (UTM) has been used widely to enhance network security protection. Typical UTM device integrates multiple security technologies, therefore its control and management involves various interfaces, message formats, communication protocols, and security policies and so on. Therefore, it is a big challenge to design and implement the configuration and management...
This paper presents a novel method for evaluating facilities in regard to their designed intelligence. Facilities intelligence is defined as the designed capacity of a facility to acquire and process data and information to perform its adaptability to life-cycle circumstance changes in terms of people's requirements of well-being and energy efficiency. This definition is then formulated to quantify...
In this paper, we present our development of a novel HEMT which uses V-shaped gate geometry to reduce the field crowding at the gate edge, and pushes the high power performance of the deeply recessed HEMTs toward higher operating voltages. The V-gate GaN HEMTs were fabricated by using a highly manufacturable approach, and demonstrated X-band power performance superior to devices made by other technologies.
GaN high electron mobility transistors (HEMTs) with novel V-shaped gates were developed. The V-gate GaN HEMTs feature two key technologies: One is the use of an epitaxially grown GaN cap layer to isolate the surface charging from affecting the 2DEG channel; the other one is the adoption of a V-shaped gate-recess geometry that effectively mitigates the electric-field crowding at the gate edge. The...
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