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Ever since the discovery of graphene, two-dimensional materials are promising to semiconductor industry. Monolayer molybdenum disulfide (MoS2) especially stands as a prospective candidate due to its stability in ambient environment; whereas, the direct bandgap makes it potential in electro-optical applications. Work function plays an important parameter for light-emitting diode and contact electrification...
In this paper, we estimate the influence of random dopants (RDs), interface traps (ITs), and random work functions (WKs) using the experimentally calibrated 3D device simulation on DC characteristic of high-к / metal gate n- and p-type bulk fin-typed field-effect-transistors. We further study these intrinsic parameter fluctuations' impact on drain induced barrier lowering (DIBL). The main findings...
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