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In this work, we investigate workfunction (WK) fluctuation of gate-all-around Si nanowire MOS devices by solving a sets of 2D Schrödinger-Poisson equations. We discuss characteristic fluctuation in view of randomly interactive quantum confinement with subbands and wavefunctions. The influences of metal-grain size and channel width on the random WK-induced characteristic fluctuation are studied; additionally,...
In this paper, we estimate the effect of random work function (WK) on the threshold voltage fluctuation of 16-nm-gate metal-oxide-semiconductor field-effect transistors (MOSFETs) with metal-gate materials. To examine the random WK induced , nanosized metal grains with different gate materials are considered in a large-scale statistical simulation. An analytical...
We study nanosized metal grains induced DC and timing fluctuations in 16 nm high-κ/metal gate (HKMG) MOSFET devices. A localized work function fluctuation (LWKF) on device's DC/AC and CMOS inverter's characteristics is advanced using an experimentally validated 3D device simulation which cannot be well modeled using an averaged WKF (AWKF) method. DC characteristics estimated by the LWKF method are...
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