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This work, for the first time, estimates the influence of intrinsic-parameter fluctuations consisting of the metal-gate work-function fluctuation (WKF), the oxide-thickness fluctuation (OTF), the process-variation effect (PVE), and the random-dopant fluctuation (RDF) on 16-nm-gate complementary metal oxide semiconductor (CMOS) devices and circuit. Experimentally calibrated 3D device / circuit coupled...
In this paper, we examine the impact of random-dopant-fluctuation (RDF), process-variation-effect (PVE), and workfunction-fluctuation (WKF), on 16-nm-gate metal-oxide-semiconductor field-effect-transistor (MOSFET) static random access memory (SRAM) cells. For planar MOSFETs with a threshold voltage of 140 mV, the nominal static noise margin (SNM) of six-transistor (6T)-SRAM with unitary cell ratio...
This work for the first time estimates the influences of the intrinsic parameter fluctuations consisting of metal gate workfunction fluctuation (WKF), process variation effect (PVE) and random dopant fluctuation (RDF) on 16-nm-gate planar metal-oxide-semiconductor field effect transistors (MOSFETs) and circuits. The WKF and RDF dominate the threshold voltage fluctuation; however, the WKF brings less...
In this study, a three-dimensional ldquoatomisticrdquo coupled device-circuit simulation approach is advanced to investigate the process-variation-effect (PVE) and random dopant fluctuation (RDF) induced characteristic fluctuations in planar metal-oxide-semiconductor field-effect-transistor (MOSFET) static random access memory (SRAM) from 65-nm to 16-nm gate length. Our preliminary results show that...
In this work, we explore the effect of process variation on field emission characteristics in surface conduction electron-emitters. The structure of palladium thin-film emitter is fabricated on the substrate and the nanometer scaled gap is formed by the focused ion beam (FIB) technique. Different shapes of nanogaps due to the process variations are investigated by the experiment and 3D Maxwell particle-in-cell...
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