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Due to their fast switching speed, knee-free forward characteristics, and a robust, low reverse recovery body diode, SiC MOSFETs are ideal candidates to replace silicon IGBTs in many high-power medium-voltage applications. 1700 V SiC MOSFETs have already been released to production at Wolfspeed based on its 2nd Gen technology. In this paper, we present our latest results in high voltage 4H-SiC MOSFET...
For the first time we report on detailed, quantitative reliability measurements and accelerated life data for > 1,300 of 900V, 10mOhm, 32mm2 SiC MOSFETs being developed for automotive and industrial applications. SiC MOSFETs were characterized and subjected to High-Temperature Reverse Bias (HTRB), High-Temperature Gate Bias (HTGB), Thermal Shock, and High-Humidity High-Temperature Reverse Bias...
Recent advances of CMOS technology and circuits have made it an alternative for realizing capable and affordable THz systems. With process and circuit optimization, it should be possible to generate useful power and coherently detect signals at frequencies beyond 1THz, and incoherently detect signals at 40THz in CMOS.
InGaAs gate-all-around (GAA) MOSFETs with implanted source and drain (S/D) structure have been demonstrated which offer large drive currents and excellent immunity to short channel effects down to deep sub-100 nm channel length [1–2]. In this work, we fabricate n++ raised S/D InGaAs GAA MOSFETs with 10nm or 20nm thick nanowires and 200nm channel length. Maximum Ion over 1 mA/μm at Vgs-Vt=1V and Vds...
Silicon-germanium dots grown in the Stranski-Krastanow mode are investigated as sources of strain for electron mobility enhancement in the silicon capping layer. N-channel MOSFETs with the channel in the Si cap-layer over the SiGe dot (DotFETs) are fabricated in a custom-made process and have an average increase in drain current of up to 22.5% compared to the reference devices. The sources of device...
A compact model has been developed to capture the variability of flicker noise resulting from the reduction in size of state of the art MOSFETs. The underlying physics of flicker noise in small area MOSFETs has been verified by two means: Monte Carlo simulation and analytic modeling. The statistical distribution of flicker noise is reported for the first time, supported by experimental data from two...
GaAs based MOSFETs have attracted significant interest as a potential technology for both digital and RF applications. Among many candidate gate insulating materials, the native oxide of InAlP offers a low leakage current and modest interface state density while at the same time being simple to fabricate and offering a path to low-cost devices. Both enhancement-mode and depletion-mode MOSFETs with...
GaAs-channel MOSFETs employing InAlP native oxide gate dielectrics and achieving record microwave performance are reported. Devices with 1 mum gate length demonstrate measured ft's of 17.0 GHz with fmax's of 74.8 GHz. Improved RF performance is obtained by vertical scaling of the device heterostructure to incorporate a 7.5 nm thick gate oxide layer. Despite the thin InAlP native oxide gate dielectric...
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