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An overview of the state-of-the art of the ongoing research on high-k gate dielectrics for the advanced nano-CMOS technology is presented. The most promising high-k candidates for next-generation MOS devices are highlighted. The associated performance degradation and the scaling limitations of these high-k materials are also discussed and emerging solutions and optimization schemes for the subnanometer...
For the first time, we report integration of air spacers with FinFET technology at 10nm node dimensions. The benefit of parasitic capacitance reduction by air spacers has been successfully demonstrated both at transistor level (15–25% reduction in overlap capacitance (COT)) and at ring oscillator level (10–15% reduction in effective capacitance (Cf)). Key process challenges and device implications...
Electromagnetic problems with both conducting and dielectric media are formulated through volume-surface integral equations (VSIEs) in integral equation approach. The conducting part is described by surface integral equation while the dielectric part is governed by volume integral equations (VIEs) and they are coupled together by produced fields. The VSIEs are usually solved by the method of moments...
Standards which are optimized for very short measuring times must operate for periods of a year or more without interruption to be considered for many applications. This is because a short-term frequency standard is typically utilized to remove the short-term variations of an atomic standard. This includes both the Caesium fountain and trapped ion clocks. For the past twenty years, microwave cryogenic...
In this article, a compact antenna is presented with an appropriate structure which has a good performance used on the dielectric and metallic objects. The loading bar and the meandered section are added to achieve a proper impedance matching between the antenna input terminal and the reference microchip whose impedance is 13-j143Ω. The antenna's wings are utilized to improve the performance when...
Volume integral equations (VIEs) are usually solved by the method of moments (MoM) with the Schaubert-Wilton-Glisson (SWG) basis function. The SWG basis function requires conformal meshes in geometric discretization and may be inconvenient for inhomogeneous problems. In this work, we propose a point-matching method for solving the VIEs without using any basis function. The method can allow an inhomogeneity...
Reconstructing unknown dielectric objects by integral equation approach requires an efficient solution of volume integral equations (VIEs) and the widely-used method of moments (MoM) with the Schaubert-Wilton-Glisson (SWG) basis function may not be appropriate in such a scenario due to the unknown profile of objects in the imaging domain. In this work, we develop a meshless scheme for solving the...
Frequency selective surfaces (FSS) have attracted researchers from many subjects for decades for its tempting applications such as for radome radar cross section (RCS) reduction, sub-reflector, et.al. Many studies was focused on different type FSS, such as unit shape, dielectric loading, layers of FSS. And it is of popular consideration that double dielectric loading on both sides of FSS be an ideal...
Nonthermal atmospheric pressure plasmas have attracted much attention for their convenient applications on surface modifications, thin film deposition, biological sterilization and inactivation et al. Most atmospheric pressure glow discharges (APGDs) are generated by sinusoidal excitation with repetition frequency from kilo hertz to mega hertz. Recently, high voltage pulses with duration less than...
We have recently designed, built and measured an alternative solution to the use of classical dielectric material in anti-reflection coatings. A metal-mesh pattern has been designed to cover a frequency band greater than 90%. We discuss measurements and illustrate the extension for bi-refringent materials.
Single crystals in the ternary MPB PM-NPZ-PT system with relatively high TCs and ECs were fabricated by the solid-state single crystal growth (SSCG) technique and their dielectric and piezoelectric properties characterized. The dc bias effect on TRT (or the application usage temperature range), the high field unipolar strain, and the strain fatigue behavior induced by a phase change were investigated...
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