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The heteroepitaxial growth of gallium nitride (GaN) on sapphire substrates by metal-organic chemical vapor deposition is most commonly carried out using the two-step growth process. This process involves the deposition of a thin GaN nucleation layer (NL) at a temperature of approximately 450–600°C. The morphology of this low-temperature film after annealing is known to have a crucial effect on the...
The widely adopted two-step growth process can reduce problems caused by lattice mismatch in growing gallium nitride (GaN) with metal-organic chemical vapor deposition on a sapphire substrate. The method involves a low-temperature GaN deposition step followed by a high-temperature one in which GaN island coalescence is followed by a quasi-two-dimensional growth mode. In this paper, a multistep growth...
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