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Resistive random access memory (RRAM) is promising to be used as high density storage-class memory by employing crossbar structure. However, the wire resistance in crossbar array causes the IR drop problem, which makes nonuniformity of write latency throughout the array. In large crossbar array, the write latency differs greatly even in the same row. Since the write latency of a region is determined...
Emerging Resistive Memory (ReRAM) is a promising candidate as the replacement for DRAM because of its low power consumption, high density and high endurance. Due to the unique crossbar structure, ReRAM can be constructed with a very high density. However, ReRAM's crossbar structure causes an IR drop problem which results in non-uniform access latency in ReRAM banks and reduces its reliability. Besides,...
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