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For realizing the next-generation phase-change memories (PCM), it is required to reduce the fluctuation of resistance values in SET state. The Sb-rich phase of Ge2Sb2Te5 was proposed to fulfill the complete crystallization process at each SET programming and the PCM devices were fabricated by using the double-layered phase-change materials composed of Ge2Sb2Te5 and Ge18Sb39Te43. It was found that...
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