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This letter presents fabrication of a power 4H-SiC bipolar junction transistor (BJT) with a high open-base breakdown voltage BVCEO ap 1200 V, a low specific on-resistance RSP_ON ap 5.2 mOmegamiddotcm2, and a high common-emitter current gain beta ap 60. The high gain of the BJT is attributed to reduced surface recombination that has been obtained using passivation by thermal silicon dioxide grown...
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