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Based on the half mode substrate integrated waveguide (HMSIW) technology, a new type of Gunn diode oscillator was developed. Main emphasis was placed on HMSIW resonant cavity structure. Restrictions on the performance of the oscillators imposed by packaged networks and the self-characteristic of the Gunn diode device have been analyzed and then the HMSIW Gunn oscillator design with higher output power...
Based on the half mode substrate integrated waveguide (HMSIW) technology, a new type of Gunn diode oscillator was developed. Main emphasis was placed on HMSIW resonant cavity structure. Restrictions on the performance of the oscillators imposed by packaged networks and the self-characteristic of the Gunn diode transistor devices have been analyzed. This oscillator's performance is characterized by...
A planar half mode substrate integrated waveguide (HMSIW) broadband bandpass filter is proposed. It is realized by cascading a lowpass filter and a highpass filter. A transmission line with half mode substrate integrated waveguide (HMSIW) on the circuit board has the characteristic of highpass, while a periodic uniform photo band structure (PBG) array has the characteristic of bandstop. Combining...
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