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This publication presents photon emission measurements of SiGe:C-HBTs acquired with Si-CCD and InGaAs detector, proving the InGaAs-camera capability for this application. The emission characteristic helps distinguish operating modes like saturation, active or avalanche. Spectral response shows a local maximum at 1300 nm, representing the decreased bandgap due to additional germanium.
Thickness mapping of thin dielectrics, one of the most important parameters for semiconductor reliability monitoring, is investigated by means of the Fowler-Nordheim (FN) current distribution. Local thinning in otherwise homogeneous dielectrics, like MOS gate oxide or EEPROM tunneling oxide, is accompanied by a sharp increase of the FN-current at these sites. The spatially resolved detection of measurable...
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