The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The growth of N-polar GaN films on (0001) Al 2 O 3 substrates by plasma-assisted molecular beam epitaxy was demonstrated using a CrN buffer layer. Analysis of reflection high energy electron diffraction (RHEED) patterns and a chemical etching method were used in order to confirm the polarity of GaN on CrN. RHEED patterns show the 3×3 pattern characteristic of GaN. Chemical etching...
We report on the growth of Ge nanowires on a (111) Si substrate using pre-deposited Ge thin films and indium metal catalyst via metal organic chemical vapor deposition. The indium metal was continuously supplied by a trimethylindium (TMIn) source flow. Transmission electron microscopy and energy disperse spectroscopy results revealed that Ge nanowires grew on the indium droplet/Si substrate and that...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.