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c-axis parallel-oriented (1120) ZnO films are suitable for shear mode devices. In previous studies, we pointed out that (1120) texture formation was induced by the ion bombardment during a planer RF magnetron sputtering deposition. However, quantitative information of the relationship between ion energy and amount of ion irradiation are not clear. In this study, we investigated the effects of energetic...
C-axis parallel-oriented ZnO piezoelectric films, (1120) or (1010) textured films, are good candidates for shear mode devices. Ion bombardment to the substrate during film deposition suppresses the usual (0001)-oriented grain growth, resulting in the preferential development of unusual (1120) or (1010) orientation. This is because the most densely packed (0001) plane should incur more damage by ion...
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