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SP6T switch achieving low loss, high isolation and small size at same time was developed. For the excellent RF performance, optimization of p-HEMT unit cell which improves the trade-off between On/Off states, and employment of optimal additional passive components was introduced. To achieve high isolation, specially, capacitors of large size was used in switch, size increase by these components was...
The new structure of electrically erasable programmable read-only memory (EEPROM), using a capacitor of stacked metal-insulator-metal (MIM) and n-well, is proposed. The oxide capacitance in the n-well region is effectively applied without sacrificing the cell area and the control gate coupling ratio. Therefore, for the same program-voltage rating, the proposed cell allows the EEPROM to have a higher...
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