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In this paper, the epitaxial growth of 3C-SiC films on SOI substrates was investigated by the hot-mesh CVD method. And their piezoresistive property was measured for the application of a pressure sensor. Heteroepitaxial growth of 3C-SiC films on SOI substrates was carried out in a HM-CVD apparatus, as shown in a previous paper [6], using H2 and MMS. SOI substrates with 100nm of top-Si layer and 200nm...
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