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Our recent research activities on the wavelength control of MEMS VCSELs will be reviewed. This talk explores the potential and challenges for new functions of VCSELs, including the wavelength athermalization and tuning with a micromachined structure.
An MQW electroabsorption-modulator integrated DFB laser fabricated by using the in-plane bandgap energy control technique and a low-capacitance semi-insulating BH process is presented. This device has a threshold current as low as 5.4 mA and a modulation efficiency as high as 13 dB/2 V. Modulation at 10 Gbit/s with a modulation voltage of only 1 V peak to peak demonstrates the potential value of this...
A novel structure electroabsorption modulator/DFB laser integrated device is proposed and demonstrated. Both functional devices consist of InGaAs/InGaAsP MQW structures with different quantum energy levels, which are automatically formed in the same MOCVD run by using a selective area growth technique. A fundamental modulation with a 12.6 dB extinction ratio is demonstrated.<<ETX>>
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