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We report a computational and experimental study using tunable infrared (IR) metasurfaces to demonstrate amplitude modulation (59%) in reflectance mode. The tuning was achieved through the addition of an active material — germanium telluride (GeTe) — within the unit cell of the metasurface architecture. An applied stimulus (temperature) is used to induce a dielectric change in the active material...
Highly scaled AlN/GaN metal–oxide–semiconductor heterojunction field-effect transistors (MOS-HFETs) with gate dielectrics of varying thicknesses deposited by atomic layer deposition (ALD) were fabricated, and their performance was compared with Schottky-barrier HFETs (SB-HFETs). MOS-HFETs with an ultrathin 2-nm-thick dielectric and a gate length...
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