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Undoped n-type MgZnO films were deposited on c-plane sapphire substrates by molecular-beam epitaxy and subsequently annealed in O2 at different pressures. After annealing at 3.03 × 105 Pa, oxygen content in the annealed films show increases and the films transform into p-type conduction. However, the decreases of oxygen content and the increases of electron concentration were obtained while the films...
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