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The Schottky barrier diodes based on homoepitaxial n-type GaN materials are fabricated for high-power terahertz multiplier applications. The dislocation density of the GaN homoepilayer is estimated to be about 2–3 orders lower than the typical dislocation density of hetero-epitaxial GaN, the defect density and square resistance are also reduced. So, the series resistance of the diodes is decreased...
A novel highly selective six-pole elliptic filter based on a substrate integrated waveguide (SIW) is proposed for the first time. The filter is composed of two planar SIW extend doublets. The modular design approach based on cascading small building blocks is adopted to reduce the effect of manufacturing tolerance on the performance of the filter. The proposed filter can produce four finite transmission...
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