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Reports on a new Si single-electron memory device comprised of a narrow channel field effect transistor (FET) having an ultra-small selfaligned floating dot gate and its ability to exhibit clear, single-electron memory effects at room temperature.
In this paper we report the dynamic properties of InAs self-assembled quantum dots for spectral hole burning memory applications. We measured the time constant of electron transport between InAs self-assembled quantum dots and the n-GaAs substrate by making use of the frequency dependence of the CV signal due to the InAs dots. We obtained a time constant of 2.1 /spl mu/s from experiments. The experimental...
The letter proposes a flip-flop circuit using a resonant-tunnelling hot electron transistor (RHET). The circuit uses a resistor in series with the base of the RHET to make bistable states. Preliminary tests have demonstrated that the circuit can be used as a static memory element, indicating that the RHET has a superior potential for use in memory and/or logic circuits.
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