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A silicon oxynitride layer was obtained on a polished silicon wafer surface by nitrogen plasma immersion ion implantation. Oxygen is provided by the residual gas in the implantation chamber (base pressure of 3times10-5 mbar) and is also implanted as the main impurity. As-implanted Si samples were analyzed by high-resolution Auger electron spectroscopy (AES), which indicated the formation of a SiOx...
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