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We present a design that achieves single spectral mode, narrow linewidth operation in broad area diodes. To the best of our knowledge, for 980 nm devices reporting a linewidth of sub-1 MHz, the power of 0.5 W (linewidth of 350 kHz) is the highest obtained.
Gain-guided lasers with distributed Bragg reflector gratings that exhibit narrow emission linewidths of under 500 kHz are demonstrated. Partial coverage of a facet with a grating is found to be sufficient to ensure single-wavelength laser operation. Narrow linewidth operation in 40 and 150-μm wide lasers with partial gratings is demonstrated. The use of antireflection coatings to suppress...
A monolithically integrated dual wavelength semiconductor laser for optical heterodyning is presented. We present a novel laser design which employs surface etched DBR gratings in order to obtain lasing at very narrow line widths.
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