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We extend our drift-diffusion based model for the carrier energy distribution function (DF), which was derived to describe hot-carrier degradation in LDMOS transistors, for the case of decananometer nMOSFETs with a gate length of 65 nm. This approach is based on an analytical expression for the DF with parameters obtained from the drift-diffusion model. To approximately consider the important effect...
A Head proton computed tomography (pCT) scanner based on a fiber tracker and scintillator stack range detector has been developed at Northern Illinois University in conjunction with Fermilab. We present preliminary results from beam tests conducted in 2014 at the Central DuPage Hospital (CDH) at Warrenville, IL. The scanner is described in [1], and the image reconstruction hardware and software are...
We describe bandwidth-on-demand in an evolved multi-layer, SDN-based Cloud Services model. We also show an initial proof-of-concept demonstration of this capability.
A comprehensive treatment of all aspects of CMOS reliability wearout mechanismsThis book covers everything students and professionals need to know about CMOS reliability wearout mechanisms, from basic concepts to the tools necessary to conduct reliability tests and analyze the results. It is the first book of its kind to bring together the pertinent physics, equations, and procedures for CMOS technology...
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