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We extend our previously suggested drift-diffusion (DD)-based hot-carrier degradation model to the case of decananometer transistors. Special attention is paid to the effect of electron–electron scattering, which populates the high energy tail of the carrier distribution function, by using a rate balance equation. We compare the results of the DD-based model with the results obtained from a spherical...
We extend our drift-diffusion based model for the carrier energy distribution function (DF), which was derived to describe hot-carrier degradation in LDMOS transistors, for the case of decananometer nMOSFETs with a gate length of 65 nm. This approach is based on an analytical expression for the DF with parameters obtained from the drift-diffusion model. To approximately consider the important effect...
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