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A hybrid ferroelectric thin film varactor device architecture is presented that allows for integrating the features of both structures of coplanar and parallel-plate varactors. In the hybrid varactor structure, a high-resistivity ZnO ultra-thin film is used as dc bias bottom electrode and at the same time the electrode does not contribute in the electric field distribution of microwave signal. The...
The origin of non-uniformity of MBE-grown InGaAs ridge quantum wires (QWRs) in sub 10-nm wire width range was investigated in detail by SEM, in situ XPS, TEM and PL measurements. InAlAs/InGaAs/InAlAs wires were selectively grown on InGaAs ridge structures prepared also by MBE on <110> stripe patterned (001) InP substrates. The main source of non-uniformity was thermal cleaning of InP in As ...
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