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We present a simple thermal treatment with the antimony source for the metal–organic chemical vapor deposition of thin GaSb films on GaAs (111) substrates for the first time. The properties of the as-grown GaSb films are systematically analyzed by scanning electron microscopy, atomic force microscopy, x-ray diffraction, photo-luminescence (PL) and Hall measurement. It is found that the as-grown GaSb...
We report high quality InAsSb films grown on Ge substrates with a GaAs intermediate layer via metal-organic chemical vapor deposition. The properties of the grown InAsSb films are systematically analysed. It is found that the grown InAsSb films by this method have high quality with very smooth, mirror-like morphology, and high optical quality. In particular, strong PL peak at around 3550 nm can be...
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