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A systematic study of strain relaxation mechanisms by TEM, XRD, RBS-channelling, SEM-CL and AFM in In x Ga 1−x As/InP heterostructures grown by MOCVD under tensile and compressive initial misfit is reported. It is found that the layers under compression (0.61<x<0.74) relax nearly symmetrically along the two 〈110〉 directions. The residual strain vs. the layer thickness follows...
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