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Nano-scale non-homogeneities in MOCVD- and HVPE-grown gallium nitride were revealed by means of photo-etching in K2S2O8–KOH solution and by chemical etching in hot KOH solution. These non-homogeneities result in formation of protruding etch features and in-depth elongated nano-pits, respectively. High spatial resolution cathodoluminescence evidenced a non-homogeneous distribution of non-radiative...
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