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In this paper, some aspects of the electrical characterization of trapping phenomena occurring at interfaces between insulators and wide band semiconductors (WBG) are presented, with a focus on the SiO2/SiC and SiO2/GaN systems. In particular, time resolved capacitance, current measurements, and parallel conductance measurements as a function of frequency were correlated to investigate trapping states...
Stability in ambient air or in vacuum‐controlled atmosphere of molecular oxygen‐induced p‐type doping of graphene monolayer on SiO2 substrate on Si is investigated by micro‐Raman spectroscopy and atomic force microscopy (AFM). The Raman 2D and G bands spectral positions and amplitude ratio are affected by the permanence in air atmosphere in a time scale of months whereas the vacuum safely maintains...
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