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The back‐cover picture shows the high‐resolution transmission electron microscopy image of an interfacial 2D structure of Si–N bonds. The formation of a 2D structure of Si–N bonds results from a post‐growth treatment of epitaxial graphene and its thermal reaction with ammonia under metal‐organic chemical vapor deposition (MOCVD) conditions typical of AlGaN growth on SiC. For further details see article...
2D SiN honeycomb monolayer structures predicted theoretically have been the focus of interest in materials science for a long time, most recently for their semiconducting and ferromagnetic properties. Herein, by investigating metal‐organic chemical vapor deposition processes and direct heat treatment of epitaxial graphene in ammonia flow, the possibility of realizing a certain periodic 2D structure...