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In this paper, the effects of rare earth materials on thin film devices has been discussed. In order to demonstrate the various effects caused by the rare earth materials, a simple Fully Depleted Silicon on Insulator (FD-SOI) MOSFET of gate length 28nm has been considered. The performance of the device is studied for different type of the rare earth (La2O3 and LaLuO3) materials, used as gate dielectric...
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