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Short term threshold instabilities may cause erratic behavior in analog circuits like comparators and analog-to-digital-converters. As conventional characterization procedures have not been appropriately sensitized to such issues, this kind of erratic behavior usually only occurs in products where it is very difficult to identify. Therefore, for example prior to the introduction of a new gate stack,...
Hot-carrier, inducing source-drain current (IDS) increase in high-voltage p-channel lateral DMOS (LDMOS) transistors, is investigated. At low gate voltage (VGS) and high drain voltage (VDS), electrons are injected into the gate oxide, creating negative fixed oxide charges and interface-states above the accumulation region and the channel towards the source side (Figure 1). The source drain current...
This work demonstrates that NBTI assessment by fast wafer level reliability methods is possible in a quantitative manner. This involves excluding time periods from the stress time that are used for restoration of damage recovered during stress interruption and a calibrated back extrapolation of measured recovery traces to short delay times based on the universal recovery equation. The development...
NBTI degradation and recovery have been investigated for 7 to 50nm oxides and compared to a thin 2.2nm nitrided oxide. A wide regime of stress fields 2.5MV/cm to 8MV/cm has been covered. NBTI effect for the nitrided oxide is larger than for non-nitrided oxides. The percentage of threshold shift DeltaVth which is "lost" during a long measurement delay - which is the quantity leading to curved...
?? NBTI measured for non-nitrided oxides ?? for wide range of stress field (3...8MV/cm) ?? for wide range of oxide thickness (7nm.....50nm) ?? and compared to thin nitrided oxide ?? Less NBTI drift in thick oxides, but same fraction of recovery and same stress field dependence ?? For fast measurement perfect power law behavior for all thicknesses / all fields ?? ?? "safest" way of assessment...
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