The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The purpose of this work was to develop a TCAD device model to study the electrical and thermal characteristics of the AlGaN/GaN HEMT in the time domain in contrast to a DC thermal equilibrium analysis. We first examined a channel temperature technique that utilizes temperature dependence of gate voltage on gate current to predict channel temperature. The predicted channel temperature of Method 3104...
Type-I double-quantum-well (QW) GaSb-based diode lasers operating at 2.7 mum with room-temperature continuous-wave (CW) output power of 600 mW and peak power-conversion efficiency of 10% were designed and fabricated. The devices employed 470-nm-wide AlGaInAsSb waveguide optimized for improved device differential gain. CW threshold current density about 100 A/cm2 per QW and slope efficiency of 150...
The purpose of this work was to develop a TCAD device model to study the electrical and thermal characteristics of the AlGaN/GaN HEMT in the time domain in contrast to a DC thermal equilibrium analysis. We first examined a channel temperature technique Method 3104 of MIL-STD 750D to determine the corresponding location in the HEMT structure that the gate voltage measurement predicts the temperature...
High-performance internally-matched GaN HEMT with 0.3 mum gate length and 4times2.5 mm of the total gate width was successfully fabricated. The large signal RF characteristics of the internally-matched device were measured at 8 GHz. A maximum output power of 64.5 W, a gain of 7.2 dB and a peak power-added efficiency (PAE) of 40% was obtained, respectively.
We report on the growth of InAs quantum-dash in InGaAlAs quantum-well structure on InP substrate using molecular beam epitaxy. The influence of different growth parameters such as InAs layer thickness, quantum barrier growth temperature, and number of stacking layers on the morphology and optical properties of dash structures were studied. The results serve as useful references for improved epitaxial...
We demonstrate a viable approach for ultrabroad-stimulated emission in InAs/InAlGaAs quantum-dash laser. This method involves the integration of multiple diodes with respective bandgaps tuned to different energies along a single laser cavity using postgrowth-intermixing process.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.