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Epitaxial LuFe 2 O 4 thin films are deposited on sapphire substrate by pulsed-laser deposition. Different growth conditions are tackled and it is found that substrate temperature is the most critical condition for the film growth; while below 750°C the film crystallization is poor. The Lu:Fe ratio is also found to be important in forming the LuFe 2 O 4 phase in the...
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